page 1 http://www.formosams.com/ tel:886-2-22696661 fax:886-2-22696141 npn epitaxial planar transistor formosa ms FMBT2222 / FMBT2222a document id issued date revised date revision page. ds-231107 2008/02/10 2011/07/21 d 9 1 2 2 2 2 3~4 5~6 7 7 7 8 9 9 list list................................................................................................. package outline............................................................................... features.......................................................................................... maximum ratings ............................................................................. rating and characteristic curves........................................................ pinning information........................................................................... marking........................................................................................... suggested solder pad layout............................................................. packing information.......................................................................... reel packing.................................................................................... suggested thermal profiles for soldering processes............................. mechanical data............................................................................... electrical characteristics.................................................................
package outline page 2 http://www.formosams.com/ tel:886-2-22696661 fax:886-2-22696141 600ma silicon npn epitaxial planar transistor collector-emitterbreakdien voltage. (bv = 40v@i =10ma) s lead-free parts for green partner, exceeds environmental standards of mil-std-19500 /228 features ceo c mall load switch transistor with high gain and low stauration voltage, is designed for general purpose amflifier and switching applications at collector current. capable of 225mw power dissipation. ? ? ? ? ? high suffix "-h" indicates halogen-free part, ex.FMBT2222-h. parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current total device dissipation fr-5 board (1) storage temperature operating temperature conditions symbol v cbo v ceo v ebo i c p d t j t stg FMBT2222 -55 ~ +150 -65 ~ +150 75 40 6.0 unit v v v ma mw o c maximum ratings (at t =25 c unless otherwise noted) a o junction to ambient r ja o c/w mechanical data ? ? ? ? ? epoxy:ul94-v0 rated flame retardant case : terminals : solder plated, solderable per mil-std-750, method 2026 mounting position : any molded plastic, sot-23 weight : approximated 0.008 gram p d thermal resistance t= 25c a o derate above 25 c o npn epitaxial planar transistor formosa ms mw/ c o total device dissipation alumina substrate(2) p d mw junction to ambient r ja o c/w p d thermal resistance t= 25c a o derate above 25 c o mw/ c o 1.fr-5 = 1.0 x 0.75 x0.062 in. 2.alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. FMBT2222a 60 30 5.0 600 556 225 1.8 417 300 2.4 FMBT2222 / FMBT2222a document id issued date revised date revision page. sot-23 dimensions in inches and (millimeters) 0.035 (0.89) 0.051 (1.30) 0.063 (1.60) 0.047 (1.20) 0.108 (2.75) 0.083 (2.10) 0.027 (0.67) 0.013 (0.32) (a) (b) (c) 0.120 (3.04) 0.110 (2.80) .084(2.10) .068(1.70) 0.045 (1.15) 0.034 (0.85) 0.020 (0.50) 0.012 (0.30) 0.007 (0.18) 0.003 (0.09) ds-231107 2008/02/10 2011/07/21 d 9
npn epitaxial planar transistor formosa ms page 3 http://www.formosams.com/ tel:886-2-22696661 fax:886-2-22696141 FMBT2222 / FMBT2222a document id issued date revised date revision page. FMBT2222 FMBT2222a FMBT2222 FMBT2222a FMBT2222 FMBT2222a FMBT2222a FMBT2222a FMBT2222a electrical characteristics (ta = 25c unless otherwise noted) off characteristics electrical characteristics (t a = 25c unless otherwise noted) (continued) on characteristics FMBT2222 FMBT2222a FMBT2222 FMBT2222a FMBT2222 FMBT2222a FMBT2222 FMBT2222a FMBT2222 FMBT2222a FMBT2222a only ds-231107 2008/02/10 2011/07/21 d 9 FMBT2222 FMBT2222a FMBT2222 FMBT2222a
npn epitaxial planar transistor formosa ms FMBT2222 / FMBT2222a page 4 http://www.formosams.com/ tel:886-2-22696661 fax:886-2-22696141 document id issued date revised date revision page. electrical characteristics (t a = 25c unless otherwise noted) (continued) small?signal characteristics switching characteristics(FMBT2222a only) FMBT2222 FMBT2222a FMBT2222 FMBT2222a FMBT2222 FMBT2222a FMBT2222a FMBT2222a FMBT2222a FMBT2222a FMBT2222a FMBT2222a FMBT2222a FMBT2222a FMBT2222a FMBT2222a ds-231107 2008/02/10 2011/07/21 d 9 3.pulse test:pulse width 300 s, duty cycle 2.0%. 4.f is defined as the frequency at which ihfe extrapolates to unity. t
page 5 http://www.formosams.com/ tel:886-2-22696661 fax:886-2-22696141 npn epitaxial planar transistor formosa ms document id issued date revised date revision page. rating and characteristic curves (FMBT2222 / FMBT2222a) ds-231107 2008/02/10 2011/07/21 d 9
page 6 http://www.formosams.com/ tel:886-2-22696661 fax:886-2-22696141 npn epitaxial planar transistor formosa ms document id issued date revised date revision page. rating and characteristic curves (FMBT2222 / FMBT2222a) ds-231107 2008/02/10 2011/07/21 d 9
suggested solder pad layout page 7 sot-23 dimensions in inches and (millimeters) 0.035(0.90) 0.031(0.80) 0.079(2.0) 0.037(0.95) 0.037(0.95) http://www.formosams.com/ tel:886-2-22696661 fax:886-2-22696141 pinning information pinb base pinc collector pine emitter pin simplified outline symbol marking type number marking code FMBT2222 m1b FMBT2222a 1p b c e e c b npn epitaxial planar transistor formosa ms FMBT2222 / FMBT2222a document id issued date revised date revision page. ds-231107 2008/02/10 2011/07/21 d 9
packing information item tolerance sot-23 carrier width carrier length carrier depth sprocket hole 13" reel outside diameter 7" reel outside diameter 13" reel inner diameter 7" reel inner diameter feed hole diameter sprocket hole position punch hole position punch hole pitch sprocket hole pitch embossment center reel width overall tape thickness tape width p 0 p 1 e b c d f t w p a d d d 1 d 1 d 2 w 1 symbol 0.1 0.1 0.1 min min 0.5 0.1 0.3 1.0 0.1 0.1 0.1 0.1 0.1 0.1 2.0 2.0 unit:mm 1.50 - 178.00 - 55.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 12.0 page 8 note:devices are packed in accor dance with eia standar rs-481-a and specifications listed above. 3.15 2.77 1.22 p 0 p 1 e b d f w p a d d 1 d 2 w 1 c t http://www.formosams.com/ tel:886-2-22696661 fax:886-2-22696141 npn epitaxial planar transistor formosa ms FMBT2222 / FMBT2222a document id issued date revised date revision page. ds-231107 2008/02/10 2011/07/21 d 9
page 9 http://www.formosams.com/ tel:886-2-22696661 fax:886-2-22696141 npn epitaxial planar transistor formosa ms FMBT2222 / FMBT2222a document id issued date revised date revision page. reel packing sot-23 3000 4.0 30,000 183*183*123 178 383*262*387 240,000 11.6 package reel size reel component spacing box inner box reel dia, carton size carton approx. gross weight (kg) (pcs) (m/m) (m/m) (m/m) (pcs) (m/m) (pcs) 7" profile feature soldering condition average ramp-up rate(t to t ) <3 /sec preheat -temperature min(tsmin) 150 -temperature max(tsmax) 200 -time(min to max)(t ) 60~120sec tsmax to t -ramp-uprate <3 /sec time maintained above: -temperature(t ) 217 -time(t ) 60~260sec peak temperature(t ) 255 0/ 5 time within 5 of actual peak temperature(t ) ramp-down rate <6 /sec time 25 to peak temperature <6minutes lp s l l l p p o o o o o oo o o o c c c c c c- + c c c c 10~30sec 3.reflow soldering 1.storage environment: temperature=5 ~40 humidity=55%25% 2.reflow soldering of surface-mount devices oo cc suggested thermal profiles for soldering processes critical zone tl to tp critical zone tl to tp tl tsmax tsmin ramp-up tp ts preheat t25 c to peak o time 25 tl tp ramp-down temperature ds-231107 2008/02/10 2011/07/21 d 9
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